M.Tech – ETC- Set-C
ELECTRONICS & TELECOMMUNICATION ENGINEERING Rf =4k
1. V1
R1 =1k
V0
+
Given the bandwidth of the circuit above is 100MHz. For what value of Rf, the bandwidth will become 25MHz. (A) 2kΩ 2.
(B) 1kΩ
(C) 16kΩ
(D)None of these +9v
For the transistor shown below, DC 50 , find VCE
1mA
(A) 3.13 V (B) 0.2V
Si
(C) 18V 50k
4.7k
(D) None of these - 9v 3.
In a forward biased Ge diode, a current of 26mA is flowing, If the voltage equivalent of temperature is 0.026 v and carrier life time is 20 sec, what will be the value of diffusion capacitance (A) 10 F
4.
(B) 15 F
(C) 20 F
(D) 25 F
What will be the voltage gain of the following circuit 25V
(A) -20
IDS (mA) VGS=4v 10k
(B) -10
8 VGS=3v 6
(C) Cannot be determined
4 2
(D) None of these
2mV
VGS=2v VGS=1v
Ac
VDS 2V
3 SPACE FOR ROUGH WORK